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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC123YUAT106 SC 70 1 NPN - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC123YUAT106 SC 70 1 NPN - biased Tape cut, re-reeling option - £0.04

Collector current: 100 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 33; DC current gain hFE - reference current: 10 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SC 70; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 2.2 kΩ; Resistance R2: 10 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTC123YUAT106; Type (transistors): NPN - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA123EUAT106 SC 70 1 PNP - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA123EUAT106 SC 70 1 PNP - biased Tape cut, re-reeling option - £0.04

Collector current: -100 mA; Collector cutoff current: -500 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -300 mV; DC current gain (hFE): 20; DC current gain hFE - reference current: -5 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SC 70; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 2.2 kΩ; Resistance R2: 2.2 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTA123EUAT106; Type (transistors): PNP - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC144WKAT146 TO 236 3 1 NPN - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC144WKAT146 TO 236 3 1 NPN - biased Tape cut, re-reeling option - £0.04

Collector current: 30 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 56; DC current gain hFE - reference current: 5 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 236 3; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 47 kΩ; Resistance R2: 22 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTC144WKAT146; Type (transistors): NPN - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA114EKAT146 SOT 723 1 PNP - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA114EKAT146 SOT 723 1 PNP - biased Tape cut, re-reeling option - £0.04

Collector current: -50 mA; Collector cutoff current: -500 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -300 mV; DC current gain (hFE): 20; DC current gain hFE - reference current: -5 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 723; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 150 mW; Resistance R1: 10 kΩ; Resistance R2: 10 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTA114EKAT146; Type (transistors): PNP - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA123JKAT146 TO 236 3 1 PNP - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA123JKAT146 TO 236 3 1 PNP - biased Tape cut, re-reeling option - £0.04

Collector current: -100 mA; Collector cutoff current: -500 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -300 mV; DC current gain (hFE): 80; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): TO 236 3; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 2.2 kΩ; Resistance R2: 47 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTA123JKAT146; Type (transistors): PNP - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA143ZUAT106 SC 70 1 PNP - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA143ZUAT106 SC 70 1 PNP - biased Tape cut, re-reeling option - £0.04

Collector current: -100 mA; Collector cutoff current: -500 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -300 mV; DC current gain (hFE): 80; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SC 70; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 4.7 kΩ; Resistance R2: 47 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTA143ZUAT106; Type (transistors): PNP - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA144EETL SC 75 1 PNP - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTA144EETL SC 75 1 PNP - biased Tape cut, re-reeling option - £0.04

Collector current: -30 mA; Collector cutoff current: -500 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -300 mV; DC current gain (hFE): 68; DC current gain hFE - reference current: -5 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SC 75; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 150 mW; Resistance R1: 47 kΩ; Resistance R2: 47 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTA144EETL; Type (transistors): PNP - biased

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ROHM Semiconductor Transistor (BJT) - Discrete 2SC4617TLS EMT3 1 NPN Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete 2SC4617TLS EMT3 1 NPN Tape cut, re-reeling option - £0.04

Collector current: 150 mA; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 400 mV; DC current gain (hFE): 120; DC current gain hFE - reference current: 1 mA; DC current gain hFE - reference voltage: 6 V; Enclosure type (semiconductors): EMT3; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 150 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 180 MHz; Type (manufacturer type): 2SC4617TLS; Type (transistors): NPN

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC123EUAT106 SC 70 1 NPN - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC123EUAT106 SC 70 1 NPN - biased Tape cut, re-reeling option - £0.04

Collector current: 100 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 20; DC current gain hFE - reference current: 20 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SC 70; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 2.2 kΩ; Resistance R2: 2.2 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTC123EUAT106; Type (transistors): NPN - biased

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ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC123JKAT146 TO 236 3 1 NPN - biased Tape cut, re-reeling option
ROHM Semiconductor Transistor (BJT) - Discrete, bias voltage DTC123JKAT146 TO 236 3 1 NPN - biased Tape cut, re-reeling option - £0.04

Collector current: 100 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 80; DC current gain hFE - reference current: 10 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 236 3; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 200 mW; Resistance R1: 2.2 kΩ; Resistance R2: 47 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): DTC123JKAT146; Type (transistors): NPN - biased

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