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Safety glasses Hazet 1985-5 Blue
Safety glasses Hazet 1985-5 Blue

For work and leisure activities · Extremely scratch resistant · Optimal fit · Protection for grinding, lathing and milling work etc · Sporty design · Perfect adjustment to the head shape · Durable anti-fog coating · DIN EN 166-168, UV 400 · Made in Germany · Colourless polycarbonate lens UV 2C-12, supravision NC coating (outside optidur NC / inside optidur 4C Plus) · Lightweight cover spectacles with an unrestricted lateral field of vision, - also suitable for spectacle wearers · Due to the flat base curve, the eye is sufficiently covered · Lens has an inclination of 11°, guaranteeing good downward visibility and offering the wearer excellent protection from tripping over · Innovative temple concept with X-Stream-technology offers high level of wearing comfort · Wave front optimized lenses allow orthoscopic and fatigue-proof sight They offer a special plus of wearing comfort especially during long working times and in connection with corrective lenses · Net weight: 004 kg

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ON Semiconductor FDV301N MOSFET 1 N-channel 350 mW SOT 23-3
ON Semiconductor FDV301N MOSFET 1 N-channel 350 mW SOT 23-3 - £0.10

C(ISS): 9.5 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 25 V; Enclosure type (semiconductors): SOT 23-3; I(d): 220 mA; Manufacturer: ON Semiconductor; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 350 mW; Q(G): 0.7 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 4 Ω; R(DS)(on) reference current: 400 mA; R(DS)(on) reference voltage: 4.5 V; RoHS-compliant: Yes; Transistor property: Logic level gate; Transistor type (category): MOSFET; Type (manufacturer type): FDV301N; Type (transistors): N-channel ; U(DSS): 25 V; U(GS)(th) max.: 1.06 V; U(GS)(th) reference current (max.): 250 µA

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Infineon Technologies IRLML2030TRPBF MOSFET 1 N-channel 1.3 W SOT 23
Infineon Technologies IRLML2030TRPBF MOSFET 1 N-channel 1.3 W SOT 23 - £0.10

C(ISS): 110 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOT 23; I(d): 2.7 A; Manufacturer: Infineon Technologies; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.3 W; Q(G): 1 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 100 mΩ; R(DS)(on) reference current: 2.7 A; R(DS)(on) reference voltage: 10 V; RoHS-compliant: Yes; Series (semiconductors): HEXFET®; Transistor property: Standard; Transistor type (category): MOSFET; Type (manufacturer type): IRLML2030TRPBF; Type (transistors): N-channel ; U(DSS): 30 V; U(GS)(th) max.: 2.3 V; U(GS)(th) reference current (max.): 25 µA

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Infineon Technologies IRLML6346TRPBF MOSFET 1 N-channel 1.3 W SOT 23
Infineon Technologies IRLML6346TRPBF MOSFET 1 N-channel 1.3 W SOT 23 - £0.14

C(ISS): 270 pF; C(ISS) reference voltage: 24 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOT 23; I(d): 3.4 A; Manufacturer: Infineon Technologies; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.3 W; Q(G): 2.9 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 63 mΩ; R(DS)(on) reference current: 3.4 A; R(DS)(on) reference voltage: 4.5 V; RoHS-compliant: Yes; Series (semiconductors): HEXFET®; Transistor property: Standard; Transistor type (category): MOSFET; Type (manufacturer type): IRLML6346TRPBF; Type (transistors): N-channel ; U(DSS): 30 V; U(GS)(th) max.: 1.1 V; U(GS)(th) reference current (max.): 10 µA

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Infineon Technologies IRLML6246TRPBF MOSFET 1 N-channel 1.3 W SOT 23
Infineon Technologies IRLML6246TRPBF MOSFET 1 N-channel 1.3 W SOT 23 - £0.14

C(ISS): 290 pF; C(ISS) reference voltage: 16 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SOT 23; I(d): 4.1 A; Manufacturer: Infineon Technologies; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.3 W; Q(G): 3.5 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 46 mΩ; R(DS)(on) reference current: 4.1 A; R(DS)(on) reference voltage: 4.5 V; RoHS-compliant: Yes; Series (semiconductors): HEXFET®; Transistor property: Standard; Transistor type (category): MOSFET; Type (manufacturer type): IRLML6246TRPBF; Type (transistors): N-channel ; U(DSS): 20 V; U(GS)(th) max.: 1.1 V; U(GS)(th) reference current (max.): 5 µA

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Infineon Technologies IRLML9303TRPBF MOSFET 1 P-channel 1.25 W SOT 23
Infineon Technologies IRLML9303TRPBF MOSFET 1 P-channel 1.25 W SOT 23 - £0.14

C(ISS): 160 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOT 23; I(d): 2.3 A; Manufacturer: Infineon Technologies; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.25 W; Q(G): 2 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 165 mΩ; R(DS)(on) reference current: 2.3 A; R(DS)(on) reference voltage: 10 V; RoHS-compliant: Yes; Series (semiconductors): HEXFET®; Transistor property: Standard; Transistor type (category): MOSFET; Type (manufacturer type): IRLML9303TRPBF; Type (transistors): P-channel ; U(DSS): 30 V; U(GS)(th) max.: 2.4 V; U(GS)(th) reference current (max.): 10 µA

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Nexperia 2N7002P,215 MOSFET 1 N-channel 350 mW SOT 23
Nexperia 2N7002P,215 MOSFET 1 N-channel 350 mW SOT 23 - £0.16

C(ISS): 50 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SOT 23; I(d): 320 A; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 350 mW; Q(G): 0.8 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 1.6 Ω; R(DS)(on) reference current: 500 mA; R(DS)(on) reference voltage: 10 V; RoHS-compliant: Yes; Transistor property: Logic level gate; Transistor type (category): MOSFET; Type (manufacturer type): 2N7002P,215; Type (transistors): N-channel ; U(DSS): 60 V; U(GS)(th) max.: 2.4 V; U(GS)(th) reference current (max.): 250 µA

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Nexperia 2N7002P,235 MOSFET 1 N-channel 350 mW SOT 23
Nexperia 2N7002P,235 MOSFET 1 N-channel 350 mW SOT 23 - £0.16

C(ISS): 50 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SOT 23; I(d): 100 A; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 350 mW; Q(G): 0.8 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 1.6 Ω; R(DS)(on) reference current: 500 mA; R(DS)(on) reference voltage: 10 V; RoHS-compliant: Yes; Transistor property: Logic level gate; Transistor type (category): MOSFET; Type (manufacturer type): 2N7002P,235; Type (transistors): N-channel ; U(DSS): 60 V; U(GS)(th) max.: 2.4 V; U(GS)(th) reference current (max.): 250 µA

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Infineon Technologies IRLML2803TRPBF MOSFET 1 N-channel 540 mW SOT 23
Infineon Technologies IRLML2803TRPBF MOSFET 1 N-channel 540 mW SOT 23 - £0.16

C(ISS): 85 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOT 23; I(d): 1.2 A; Manufacturer: Infineon Technologies; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 540 mW; Q(G): 5 nC; Q(G) reference voltage: 10 V; R(DS)(on): 250 mΩ; R(DS)(on) reference current: 910 mA; R(DS)(on) reference voltage: 10 V; RoHS-compliant: Yes; Series (semiconductors): HEXFET®; Transistor property: Standard; Transistor type (category): MOSFET; Type (manufacturer type): IRLML2803TRPBF; Type (transistors): N-channel ; U(DSS): 30 V; U(GS)(th) max.: 1 V; U(GS)(th) reference current (max.): 250 µA

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Infineon Technologies IRLML0040TRPBF MOSFET 1 N-channel 1.3 W SOT 23
Infineon Technologies IRLML0040TRPBF MOSFET 1 N-channel 1.3 W SOT 23 - £0.18

C(ISS): 266 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 40 V; Enclosure type (semiconductors): SOT 23; I(d): 3.6 A; Manufacturer: Infineon Technologies; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.) (num): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.3 W; Q(G): 3.9 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 56 mΩ; R(DS)(on) reference current: 3.6 A; R(DS)(on) reference voltage: 10 V; RoHS-compliant: Yes; Series (semiconductors): HEXFET®; Transistor property: Standard; Transistor type (category): MOSFET; Type (manufacturer type): IRLML0040TRPBF; Type (transistors): N-channel ; U(DSS): 40 V; U(GS)(th) max.: 2.5 V; U(GS)(th) reference current (max.): 25 µA

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