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City Sightseeing Turin + Casa Martini - Discovery Tour
City Sightseeing Turin + Casa Martini - Discovery Tour

Casa Martini Ticket includes:  2 hour Audioguide Tour (English or Italian) Tasting session : Cocktail Martini & Tonic or Tasting of two Martini samples in the Martini Store.  Visit the Casa Martini museum with the audioguide and finish the wonderful tour with a delicious tasting of the Martini samples.  Casa Martini pays homage to the origins of Martini & Rossi while serving as a modern production facility, bringing together the past and future in a center of history and culture. Located in Pessione di Chieri (Turin), at Martini & Rossi's historic premises, it marks the meeting point between the company's traditions and future. The company has both its roots here and, at the same time, an avant-garde production facility. The key feature of Casa Martini is versatility. One location brings a number of distinct but complementary areas together: culture (represented by the Museum of Wine History and the Mondo Martini Gallery), runs side by side with training (the Bar Academy, the Botanical Room and Old Laboratory), hospitality (Terrazza Martini and Lounge Bar), and leisure shopping at the Martini Store. City Sightseeing Turin City Sightseeing Torino features 3 routes: the classic Torino Centro (line A), to be fascinated by the baroque city centre and the hill overlooking the Po river with the Valentino Park. The B line, Torino Inedita is the fastest way to reach unexplored sites and find out the new face of the city: the renewed Automobile Museum, Lingotto, Eataly, the Olympic venues and Palazzina di Caccia di Stupinigi. The new C line Residenze Reali comfortably leads you to the Juventus Stadium&Museum; and to the Royal Residences: Reggia di  Venaria, Castello de La Mandria and Castello di Rivoli, all listed “World Heritage Sites” by UNESCO. All buses are equipped with a 8 languages digital audio system (Italian, English, French, German, Spanish, Russian, Chinese and Portuguese). Click here to view the route map *Please note Lines B & C only run during High Season (24 Mar - 6 Nov) and Line C only at weekends. Sightseeing Experience Mobile App Are you visiting Italian cities or are you planning a trip to Italy? This free application will help you plan your vacation in over 15 Italian cities      

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Nexperia Transistor (BJT) - Discrete BCX17 SOT 23 1 PNP Tape cut, re-reeling option
Nexperia Transistor (BJT) - Discrete BCX17 SOT 23 1 PNP Tape cut, re-reeling option - £0.10

Collector current: -500 mA; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.): -620 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -100 mA; DC current gain hFE - reference voltage: -1 V; Enclosure type (semiconductors): SOT 23; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 80 MHz; Type (manufacturer type): BCX17; Type (transistors): PNP

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Nexperia Transistor (BJT) - Discrete PMBT3906,215 SOT 23 1 PNP
Nexperia Transistor (BJT) - Discrete PMBT3906,215 SOT 23 1 PNP - £0.13

Collector current: -200 mA; Collector cutoff current: -50 nA; Collector emitter voltage U(CEO): -40 V; Collector-emitter saturation voltage (max.): -400 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -1 V; Enclosure type (semiconductors): SOT 23; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 250 MHz; Type (manufacturer type): PMBT3906,215; Type (transistors): PNP

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Nexperia Transistor (BJT) - Discrete MMBT3906,215 SOT 23 1 PNP
Nexperia Transistor (BJT) - Discrete MMBT3906,215 SOT 23 1 PNP - £0.16

Collector current: -200 mA; Collector cutoff current: -50 nA; Collector emitter voltage U(CEO): -40 V; Collector-emitter saturation voltage (max.): -400 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -1 V; Enclosure type (semiconductors): SOT 23; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 250 MHz; Type (manufacturer type): MMBT3906,215; Type (transistors): PNP

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Nexperia Transistor (BJT) - Discrete BC857CW,115 SOT 323 1 PNP
Nexperia Transistor (BJT) - Discrete BC857CW,115 SOT 323 1 PNP - £0.17

Collector current: -100 mA; Collector cutoff current: -15 nA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.): -600 mV; DC current gain (hFE): 420; DC current gain hFE - reference current: -2 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 323; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 200 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 100 MHz; Type (manufacturer type): BC857CW,115; Type (transistors): PNP

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Dominant Semiconductors DNA-CJS-RS2-1 SMD LED Non-standard Amber 285 mcd 120 ° 30 mA 1.95 V Tape cut, re-reeling option
Dominant Semiconductors DNA-CJS-RS2-1 SMD LED Non-standard Amber 285 mcd 120 ° 30 mA 1.95 V Tape cut, re-reeling option - £0.18

This compact SMD-LED fulfillls the quality standard of German Automobile Industry. Applications: general lighting, ambience lighting, LCD backlighting, advertising.

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Dominant Semiconductors DNG-CJS-PQ2-1 SMD LED Non-standard Green 112.5 mcd 120 ° 30 mA 1.95 V Tape cut, re-reeling option
Dominant Semiconductors DNG-CJS-PQ2-1 SMD LED Non-standard Green 112.5 mcd 120 ° 30 mA 1.95 V Tape cut, re-reeling option - £0.18

This compact SMD-LED fulfillls the quality standard of German Automobile Industry. Applications: general lighting, ambience lighting, LCD backlighting, advertising.

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Nexperia Transistor (BJT) - Discrete BC857,215 SOT 23 1 PNP
Nexperia Transistor (BJT) - Discrete BC857,215 SOT 23 1 PNP - £0.19

Collector current: -100 mA; Collector cutoff current: -15 nA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.): -650 mV; DC current gain (hFE): 125; DC current gain hFE - reference current: -2 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 23; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 100 MHz; Type (manufacturer type): BC857,215; Type (transistors): PNP

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Nexperia Transistor (BJT) - Discrete BC856A,215 SOT 23 1 PNP
Nexperia Transistor (BJT) - Discrete BC856A,215 SOT 23 1 PNP - £0.20

Collector current: -100 mA; Collector cutoff current: -15 nA; Collector emitter voltage U(CEO): -65 V; Collector-emitter saturation voltage (max.): -650 mV; DC current gain (hFE): 125; DC current gain hFE - reference current: -2 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 23; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 100 MHz; Type (manufacturer type): BC856A,215; Type (transistors): PNP

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Nexperia Transistor (BJT) - Discrete BC857A,215 SOT 23 1 PNP
Nexperia Transistor (BJT) - Discrete BC857A,215 SOT 23 1 PNP - £0.20

Collector current: -100 mA; Collector cutoff current: -15 nA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.): -650 mV; DC current gain (hFE): 125; DC current gain hFE - reference current: -2 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 23; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 100 MHz; Type (manufacturer type): BC857A,215; Type (transistors): PNP

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